Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same

ABSTRACT

A method of forming a material. The method comprises conducting an ALD layer cycle of a first metal, the ALD layer cycle comprising a reactive first metal precursor and a co-reactive first metal precursor. An ALD layer cycle of a second metal is conducted, the ALD layer cycle comprising a reactive second metal precursor and a co-reactive second metal precursor. An ALD layer cycle of a third metal is conducted, the ALD layer cycle comprising a reactive third metal precursor and a co-reactive third metal precursor. The ALD layer cycles of the first metal, the second metal, and the third metal are repeated to form a material, such as a GeSbTe material, having a desired stoichiometry. Additional methods of forming a material, such as a GeSbTe material, are disclosed, as is a method of forming a semiconductor device structure including a GeSbTe material.

TECHNICAL FIELD

Embodiments of the present invention relate to methods of forming agermanium-antimony-tellurium (GeSbTe) material by atomic layerdeposition (ALD) and to a method of forming a semiconductor devicestructure including the GeSbTe material.

BACKGROUND

Phase change materials are known in the art for use in phase changememory. One common phase change material is Ge₂Sb₂Te₅, which isdeposited by physical vapor deposition (PVD), chemical vapor deposition(CVD) or ALD. One disadvantage of PVD processes is that the process isnot useful to deposit Ge₂Sb₂Te₅ in small structures, such as small viasor openings, which are becoming more commonplace as the size ofsemiconductor devices decreases.

Conventional ALD processes are well-suited for depositing highlyconformal layers of GeSbTe materials in small openings or vias. However,compositions of GeSbTe materials that are capable of being deposited bythese ALD processes are limited in the ratio of elements that can bepresent due to the chemistries of Ge, Sb, and Te. The stoichiometry ofthe GeSbTe material is fixed based on the precursors used. Only GeSbTematerials having compositions that fall on the GeTe or GeTe₂ and Sb₂Te₃tie-lines for GeSbTe materials are possible by conventional ALDprocesses. While various precursors for ALD of GeSbTe materials areknown, one problem with conventional ALD processes is that thecomposition of the resulting GeSbTe material is limited by themechanisms of the ligand exchange reaction. For instance, if Ge(II)Cl₂and Te(II)(TMS)₂ are used as precursors, GeTe is the predominantmaterial formed by ALD. If Ge(IV)Cl₄ and Te(II)(TMS)₂ are used as theprecursors, GeTe₂ is the predominant material formed by ALD. IfGe(IV)(OEt)₄ and Te(II)(TMS)₂ are used as the precursors, GeTe₂ is thepredominant material formed by ALD. If Sb(III)(OEt)₃ and Te(II)(TMS)₂are used as the precursors, Sb₂Te₃ is the predominant material formed byALD. If Sb(III)Cl₃ and Te(II)(TMS)₂ are used as the precursors, Sb₂Te₃is the predominant material formed by ALD. Other stoichiometries of themetals relative to one another are not possible.

As the size of semiconductor devices continue to decrease, it would bedesirable to be able to deposit GeSbTe materials in small vias oropenings by ALD. In addition, it would be desirable to have an ALDprocess that is capable of producing GeSbTe materials of otherstoichiometries, such as stoichiometries that are off the compositiontie-line.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a portion of a semiconductor devicestructure during fabrication thereof in accordance with an embodiment ofthe present invention; and

FIG. 2 is a cross-sectional view of a phase change random access memory(“PCRAM”) device including the GeSbTe material &limed in accordance withan embodiment of the present invention.

DETAILED DESCRIPTION

Methods of forming GeSbTe materials having a desired stoichiometry orratio of elements by an ALD process, a method of forming a semiconductordevice structure including the GeSbTe materials, and GeSbTe materialshaving the desired stoichiometry are disclosed. As used herein, the term“GeSbTe material” means and includes a material having a chemicalcomposition according to the following formula:Ge_(x)Sb_(100−(X+y))Te_(y), where the stoichiometry (in atomic percent)of Ge and Te are indicated by x and y, respectively, and the remainderof the GeSbTe material is Sb. In the formula, x is greater thanapproximately 5 atomic percent but less than approximately 60 atomicpercent, such as between approximately 17 atomic percent andapproximately 44 atomic percent, and y is greater than approximately 20atomic percent but less than approximately 85 atomic percent, such asbetween approximately 23 atomic percent and approximately 56 atomicpercent. The GeSbTe material is a compound of germanium, antimony, andtellurium.

The following description provides specific details, such as materialtypes, material thicknesses, and processing conditions in order toprovide a thorough description of embodiments of the present invention.However, a person of ordinary skill in the art would understand that theembodiments of the present invention may be practiced without employingthese specific details. Indeed, the embodiments of the present inventionmay be practiced in conjunction with conventional fabrication techniquesemployed in the industry. In addition, the description provided belowdoes not form a complete process flow for manufacturing a semiconductordevice, such as a PCRAM device. The semiconductor device structuredescribed below does not form a complete semiconductor device. Onlythose process steps and structures necessary to understand theembodiments of the present invention are described in detail below.Additional steps to form the complete semiconductor device from thesemiconductor device structure may be performed by conventionalfabrication techniques.

To form each germanium layer, antimony layer, or tellurium layer of theGeSbTe material, a plurality of germanium precursors, antimonyprecursors, or tellurium precursors may be utilized in a single ALDlayer cycle. As used herein, the term “ALD layer cycle” means andincludes a portion of the ALD process during which a saturated layer ofa metal is formed, which layer may be less than a monolayer of thematerial. A plurality of ALD layer cycles is conducted to form thedesired GeSbTe material. For simplicity, the term “metal” is used hereinto refer to at least one of germanium, antimony, or tellurium, while theterms “germanium,” “antimony,” and “tellurium” are used to refer to thespecific metals. For simplicity, the term “metal precursor(s)” is usedherein to collectively refer to at least one of the germaniumprecursor(s), antimony precursor(s), or tellurium precursor(s), whilethe terms “germanium precursor(s),” “antimony precursor(s),” and“tellurium precursor(s)” refer to precursor(s) of the specific metal.The germanium precursor(s), antimony precursor(s), or telluriumprecursor(s) may function as a source of germanium, antimony, ortellurium, respectively.

In each ALD layer cycle, a reactive metal precursor may be reacteddirectly with a co-reactive metal precursor. Each of the metalprecursors includes a metal and at least one ligand coordinated to themetal, with the metal in each of the metal precursors being the same. Inother words, the metal precursors used in a particular ALD layer cyclemay differ in the ligands, which provide the desired degree ofreactivity to the metal precursors, but have the same metal center. Thenumber of ligands coordinated to the metal is dependent on the valencestate of the metal and may be determined by a person of ordinary skillin the art. For simplicity, the term “ligand” is used herein even ifmultiple ligands are coordinated to the metal. Each of the ligandscoordinated to the metal may be selected depending on the desiredreactivity of the metal precursor. As used herein, the terms “reactivemetal precursor” and “co-reactive metal precursor” are used todifferentiate between the metal precursors and do not indicate relativereactivities of the metal precursors utilized in a particular ALD layercycle.

The two metal precursors used in a particular ALD layer cycle may havethe following general structure M−(L1)_(n) and M−(L2)_(n), where M isthe metal (germanium, antimony, or tellurium), L1 and L2 are ligands,and n is the number of ligands coordinated to the metal, which isdependent on the valence state of the metal and is an integer greaterthan or equal to 2. Each of the ligands coordinated to the metal may bethe same or may be different so long as the desired reactivity of themetal precursor is achieved. As a result, the metal precursor may besymmetric or asymmetric. The metal precursors used in a particular ALDlayer cycle may be able to participate in efficient ligand exchangereactions with one another. The metal precursors may also havesufficient reactivity, thermal stability, and volatility to be used inthe ALD process. The metal precursors may be solids, liquids, or gasesat room temperature (from approximately 20° C. to approximately 25° C.).

By way of example, during an ALD layer cycle to deposit a germaniummonolayer on a substrate, two germanium precursors may be utilized, withone of the germanium precursors being a reactive germanium precursor andthe other being a co-reactive germanium precursor. Since the germaniumhas a valence state of +2 or +4, two ligands or four ligands may becoordinated to the germanium. Thus, the formation of the germanium layerduring the ALD layer cycle may utilize two germanium precursors having acommon metal center but different ligands.

Reactive ligands that may be used include, but are not limited to, ahalide group or an alkoxide group. By way of example, the reactiveligand may be a fluoride group, a chloride group, a bromide group, aniodide group, or combinations thereof Metal halides that may be used asthe reactive metal precursor include, but are not limited to, Ge(II)F₂,Ge(IV)F₄, Ge(II)Cl₂, Ge(IV)Cl₄, Ge(II)Br₂, Ge(IV)Br₄, Ge(IV)I₄, Sb(V)F₅,Sb(III)F₃, Sb(III)Cl₃, Sb(V)Cl₅, Sb(III)Br₃, TeCl₄, TeBr₄, or Tel₄. Suchmetal halides are commercially available from numerous sources, such asfrom Sigma-Aldrich Co. (St. Louis, Mo.). While each of the aboveexamples includes a single type of halide group as the ligand, a metalhalide having at least two different halide groups may be used. Thealkoxide group of the reactive ligand may include an alkyl group havingfrom one carbon atom to eight carbon atoms, including straight orbranched carbon chains. By way of example, the alkoxide group may be amethoxy group (OMe), an ethoxy group (OEt), an iso-propoxy group, ann-propoxy group, an iso-butoxy group, an n-butoxy group, a sec-butoxygroup, a t-butoxy group, a pentoxy group, a hexoxy group, a heptoxygroup, an octoxy group, or combinations thereof The alkoxide may alsoinclude heteroatoms, such as oxygen, nitrogen, or sulfur. Metalalkoxides that may be used as the reactive metal precursor include, butare not limited to, germanium(IV) methoxide (Ge(OMe)₄), germanium(IV)ethoxide (Ge(OEt)₄), antimony(III) methoxide (Sb(OMe)₃), antimony(III)ethoxide (Sb(OEt)₃), tellurium(IV) methoxide (Te(OMe)₄), ortellurium(IV) ethoxide (Te(OEt)₄). Such metal alkoxides are commerciallyavailable from numerous sources, such as from Sigma-Aldrich Co. (St.Louis, Mo.). While each of the above examples includes a single type ofalkoxide group as the ligand, a metal alkoxide having at least twodifferent alkoxide groups may be used.

The co-reactive ligand coordinated to the metal may be a substitutedsilyl group. The substituents on the silicon atom of the substitutedsilyl group may include a hydrogen atom, an alkyl group, an alkenylgroup, a halogen atom, or combinations thereof. The alkyl group andalkenyl group may have from one carbon atom to four carbon atoms and mayinclude straight or branched carbon chains. By way of example, thesilicon atom may be substituted with trimethyl groups, forming atrimethylsilyl (TMS) group. The substituted silyl group may also includeheteroatoms, such as oxygen, nitrogen, or sulfur. Metal silyl compoundsthat may be used as the co-reactive metal precursor include, but are notlimited to, a disilylgermanium compound, a silylalkylgermanium compound,a tetrasilylgermanium compound, a trisilylalkylgermanium compound, atrisilylgermanium hydride compound, a silyltrialkylgermane compound, adisilyldialkylgermanium compound, a silyltrialkylgermanium compound, atrisilylantimony compound, a disilylalkylantimony compound, adialkylsilylantimony compound, a disilylaminoantimony compound, adisilyltellurium compound, a silylalkyltellurium compound, or asilylaminotellurium compound. By way of example, the metal silylcompound may be Ge(II)(TMS)₂, Ge(IV)(TMS)₄, GeH(TMS)₃, Sb(III)(TMS)₃,Te(II)(TMS)₂, or Te(IV)(TMS)₄. Such metal silyl compounds arecommercially available from numerous sources, such as Air Products andChemicals, Inc. (Allentown, Pa.), or may be synthesized by conventionaltechniques.

By way of example, the reactive metal precursor used in the ALD layercycle may be the metal halide and the co-reactive metal precursor may bethe metal silyl compound. Alternatively, the reactive metal precursorused in the ALD layer cycle may be the metal alkoxide and theco-reactive metal precursor may be the metal silyl compound.

The GeSbTe material may be formed on the substrate by an ALD processutilizing the reactive metal precursors and the co-reactive metalprecursors. As used herein, the term “substrate” refers to aconventional silicon substrate or other bulk substrate having a layer ofsemiconductor material. As used herein, the term “bulk substrate”includes not only silicon wafers, but also silicon-on-insulator (“SOT”)substrates, silicon-on-sapphire (“SOS”) substrates, epitaxial layers ofsilicon on a base semiconductor foundation, and other semiconductor, oroptoelectronics materials, such as silicon-germanium, germanium, galliumarsenide, or indium phosphide. The substrate may include materialsthereon, such as dielectric or conductive materials present from aprevious manufacturing act. By way of example, the substrate may be anintermediate structure produced during the fabrication of a PCRAMdevice. While the materials described and illustrated herein may beformed as layers, the materials are not limited thereto and may beformed in other three-dimensional configurations.

If the metal precursors used in the ALD process are solids or liquids atroom temperature, the metal precursors may be volatilized beforeintroduction into an ALD deposition chamber or reactor. ALD depositionchambers are known in the art and, therefore, are not described indetail herein. Solid metal precursors may be dissolved or suspended inan appropriate solvent before use in the ALD process. Liquid metalprecursors may be used neat or combined with an appropriate solventbefore use in the ALD process. Each of the metal precursors may besequentially delivered to the ALD deposition chamber by conventionaltechniques dependent on the phase characteristics of the respectivemetal precursor, the desired flow rate, or the processing temperature.The technique for delivery of the metal precursors may be determined bya person of ordinary skill in the art and, therefore, is not describedin detail herein. By way of example, the metal precursors may beintroduced into the ALD deposition chamber by vapor draw or directliquid injection. The metal precursors may be delivered to the ALDreaction chamber by a carrier gas, such as nitrogen, helium, argon,hydrogen, or combinations thereof.

The substrate may be placed in the ALD deposition chamber andsequentially exposed to the reactive and co-reactive germaniumprecursors, the reactive and co-reactive antimony precursors, or thereactive and co-reactive tellurium precursors to produce monolayers ofgermanium, antimony, and tellurium, respectively. By way of example, thesubstrate may be placed in the ALD deposition chamber and subsequentlyexposed to one cycle of the germanium chloride precursor. The ALDdeposition chamber may then be purged and the substrate exposed to theTe(TMS)₂ precursor. The ALD deposition chamber may then be purged. Thesubstrate may then be exposed to one cycle of the antimony alkoxideprecursor. The ALD deposition chamber may then be purged and thesubstrate exposed to the Te(TMS)₂ precursor, yielding a GeSbTe materialhaving a Ge:Sb:Te ratio of 2:2:5. If a higher tellurium content isdesired, the substrate may be exposed to tellurium(IV) ethoxide,followed by exposure to Te(TMS)₂. The tellurium content may be adjustedby varying the number of GeSbTe ALD layer cycles to the number to Te ALDlayer cycles. The ALD deposition chamber may then be purged. Thesubstrate may be exposed for an amount of time sufficient for the metalprecursors to saturate the surface of the substrate. The ALD depositionchamber may be fully purged between cycles in order to prevent aCVD-like reaction. ALD layer cycles to produce the monolayers ofgermanium, antimony, and tellurium may be repeated until a desiredthickness of the GeSbTe material is achieved. The number of ALD layercycles may also be repeated to provide the GeSbTe material having thedesired stoichiometry, as explained in more detail below. The GeSbTematerial produced by the method of the present invention is not limitedto alternating single layers of each material. Rather, the GeSbTematerial may also include several layers of one metal (formed byconducting several ALD layer cycles of the particular metal) alternatingwith a single layer of a second metal or third metal (formed byconducting a single ALD layer cycle of the second or third metal), toobtain a desired stoichiometry of the GeSbTe material.

The reactive metal precursor and the co-reactive metal precursor of aparticular metal may be separately introduced into the ALD reactionchamber containing the substrate. The reactive metal precursor and theco-reactive metal precursor may be introduced into the ALD reactionchamber at a flow rate of from approximately 5 standard cubiccentimeters per minute (sccm) to approximately 500 sccm. The reactivemetal precursor may react with surface groups on the substrate to form apartial monolayer of the metal on the substrate. The substrate may beexposed to the reactive metal precursor (i.e., metal alkoxide or metalhalide) for an amount of time sufficient for the reactive metalprecursor to react with the substrate. The exposure time may range fromapproximately 0.1 second to approximately 30 seconds. The ALD reactionchamber may then be purged with an inert gas, such as argon or nitrogen,to remove excess reactive metal precursor and reaction byproducts. Thepurge time may range from approximately 0.1 second to approximately 60seconds. The co-reactive metal precursor may be introduced into the ALDreaction chamber and reacted with the hydroxyl or halide groups on thesubstrate and with portions of the partial monolayer of the metal thatinclude remaining ligands from the reactive metal precursor to formadditional metal. The alkoxide groups or halogen groups of the reactivemetal precursor are nucleophilic substituents that may react with thesilyl group of the co-reactive metal precursor by a ligand exchangereaction to form the layer of the metal on the substrate. The exposuretime may range from approximately 0.1 second to approximately 30seconds. The metal from the reactive metal precursor and the co-reactivemetal precursor, in combination, may form the monolayer of the metal onthe substrate during the ALD layer cycle. The ALD reaction chamber maythen be purged with the inert gas before introducing the reactive andco-reactive metal precursors having a different metal to conductadditional ALD layer cycles. The purge time may range from approximately0.1 second to approximately 60 seconds. Each ALD layer cycle may depositfrom approximately 0.25 A to approximately 2.0 A per cycle. During eachALD layer cycle, the ALD deposition chamber may be maintained at atemperature of from approximately room temperature to approximately 150°C. In contrast, conventional ALD processes are conducted at atemperature of from approximately 180° C. to approximately 300° C. TheALD layer cycles may be repeated until the GeSbTe material is of adesired thickness and stoichiometry.

By way of example, to form a germanium layer by ALD, the reactivegermanium precursor (i.e., Ge(OEt)₄) and the co-reactive germaniumprecursor (i.e., GeH(IV)(TMS)₃) may be sequentially introduced into theALD reaction chamber and exposed to the substrate. The reactivegermanium precursor may be introduced into the ALD reaction chamber andreacted with the substrate to form a partial germanium monolayer, theALD reaction chamber purged to remove excess reactive germaniumprecursor and byproducts, the co-reactive germanium precursor introducedinto the ALD reaction chamber and reacted with the substrate, and theALD reaction chamber purged to remove excess co-reactive germaniumprecursor and byproducts. The reactive germanium precursor and theco-reactive germanium precursor may each be pulsed into the ALD reactionchamber for an amount of time sufficient for the reactive germaniumprecursor and the co-reactive germanium precursor to be chemisorbed oradsorbed to the substrate, resulting in the formation of the germaniumlayer. During formation of the germanium layer, the ALD reaction chambermay be maintained at a temperature of between approximately 20° C. andapproximately 150° C.

To form an antimony layer by ALD, the reactive antimony precursor (i.e.,Sb(OEt)₃) and the co-reactive antimony precursor (i.e., Sb(III)(TMS)₃)may be separately introduced into the ALD reaction chamber and exposedto the germanium layer on the substrate. The reactive antimony precursormay react with ligands of the reactive germanium precursor and theco-reactive germanium precursor to form a partial antimony monolayerover the germanium layer. The co-reactive antimony precursor may reactwith ligands of the reactive germanium precursor and the co-reactivegermanium precursor to form the antimony layer over the germanium layer.The reactive antimony precursor and the co-reactive antimony precursormay be sequentially pulsed into the ALD reaction chamber for an amountof time sufficient for the reactive antimony precursor and theco-reactive antimony precursor to be chemisorbed or adsorbed to thegermanium monolayer, resulting in the formation of the antimonymonolayer. Between pulses of the reactive antimony precursor and theco-reactive antimony precursor, the ALD reaction chamber may be purgedwith the inert gas to remove excess reactive antimony precursor,co-reactive antimony precursor, and byproducts.

To form a tellurium layer by ALD, the reactive tellurium precursor(i.e., Te(OEt)₄) and the co-reactive tellurium precursor (i.e.,Te(TMS)₂) may be separately introduced into the ALD reaction chamber andexposed to the antimony layer. The reactive tellurium precursor mayreact with ligands of the reactive antimony precursor and theco-reactive antimony precursor to form a partial tellurium monolayerover the antimony layer. The co-reactive tellurium precursor may reactwith ligands of the reactive antimony precursor and the co-reactiveantimony precursor to form the tellurium layer over the antimony layer.The reactive tellurium precursor and the co-reactive tellurium precursormay be sequentially pulsed into the ALD reaction chamber for an amountof time sufficient for the reactive tellurium precursor and theco-reactive tellurium precursor to be chemisorbed or adsorbed to theantimony layer, resulting in the formation of the tellurium layer.Between pulses of the reactive tellurium precursor and the co-reactivetellurium precursor, the ALD reaction chamber may be purged with theinert gas to remove excess reactive tellurium precursor, co-reactivetellurium precursor, and byproducts.

Since the ALD layer cycles for forming the metal layers include reactiveand co-reactive metal precursors, the metal layers may be formed withoutco- reactants, such as water, oxygen, hydrogen, or ammonia. Each of theALD layer cycles may include the metal precursors, the carrier gas, andthe purge gas, with no other reactants.

In one embodiment, the reactive germanium precursor is Ge(II)Cl₂ and theco-reactive metal precursor is GeH(IV)(TMS)₃. When these germaniumprecursors are reacted in the ALD reaction chamber, the layer ofgermanium is formed on the substrate. In one embodiment, the reactiveantimony precursor is Sb(III)(OEt)₃ and the co-reactive antimonyprecursor is Sb(III)(TMS)₃, which react to form the layer of antimony onthe layer of germanium. In another embodiment, the reactive metalprecursor is Sb(III)Cl₃ and the co-reactive metal precursor isSb(III)(TMS)₃, which react to form the layer of antimony on thegermanium layer. In another embodiment, the reactive metal precursor isTe(OEt)₄ and the co-reactive metal precursor is Te(II)(TMS)₂, whichreact to form the layer of tellurium on the antimony layer. In anotherembodiment, the reactive metal precursor is Te(OMe)₄ and the co-reactivemetal precursor is Te(II)(TMS)₂, which react to form the layer oftellurium on the antimony layer.

While the ALD process described above includes forming the germaniumlayer, the antimony layer, and the tellurium layer, the metal monolayersmay be formed in any order so long as the tellurium layer is notdeposited directly on the substrate because Te(II)(TMS)₂ may poison thesubstrate.

The ALD layer cycles described above may be repeated to form the GeSbTematerial having the desired stoichiometry. By adjusting the number ofthe ALD layer cycles, the GeSbTe material having the desiredstoichiometry may be formed. By way of example, one germanium ALD layercycle (using Ge(II)Cl₂ and GeH(IV)(TMS)₃ as the germanium precursors),one antimony ALD layer cycle (using Sb(III)(OEt)₃ and Sb(III)(TMS)₃ asthe antimony precursors), and three tellurium ALD layer cycles (usingTe(OEt)₄ and Te(II)(TMS)₂ as the tellurium precursors) may be conductedto form GeSbTe₃. By adjusting the number of ALD layer cycles conductedof a particular metal, the composition of the GeSbTe material may bealtered. In another example, two cycles of the germanium ALD layer cyclemay be conducted with two cycles of the antimony ALD layer cycle andthree cycles of the tellurium ALD layer cycle to form Ge₂Sb₂Te₃. Afterconducting the desired number of ALD layer cycles to form the desirednumber of layers of germanium, antimony, and tellurium to achieve thedesired thickness of the GeSbTe material, the GeSbTe material may beannealed.

In yet another example, to form GeSb₄Te₇, germanium layers may be formedby reacting the reactive germanium precursor (GeCl₄) and the co-reactivegermanium precursor (GeH(TMS)₃) as described above, antimony layers maybe formed by reacting the reactive antimony precursor (SbCl₃) and theco-reactive antimony precursor (Sb(III)(TMS)₃) as described above, andtellurium layers may be formed by reacting the reactive telluriumprecursor (Te(OEt)₄) and the co-reactive tellurium precursor(Te(II)(TMS)₂) as described above. The germanium and tellurium layersmay form GeTe and the antimony and tellurium layers may form Sb₂Te₃. Ifone GeTe ALD cycle and two Sb₂Te₃ ALD cycles are conducted, GeSb₄Te₇(GeTe+Sb₄Te₆) may be formed. If one GeTe ALD cycle and three Sb₂Te₃ ALDcycles are conducted, GeSb₆Te₁₀ (GeTe+Sb₆Te₉) may be formed. If two GeTeALD cycles and one Sb₂Te₃ ALD cycle are conducted, Ge₂Sb₂Te₅(Ge₂Te₂+Sb₂Te₃) may be formed. If two GeTe ALD cycles and two Sb₂Te₃ ALDcycles are conducted, GeSb₂Te₄ may be formed. If two GeTe ALD cycles andthree Sb₂Te₃ ALD cycles are conducted, Ge₂Sb₆Te₁₁ (Ge₂Te₂+Sb₆Te₉) may beformed. Therefore, simply by adjusting the number of ALD cycles, GeSbTematerials of desired stoichiometries may be formed.

By utilizing the method of the present disclosure, GeSbTe materialshaving compositions off the Ge−Te and Sb₂Te₃ tie-line may be produced.The method of the present invention may also be utilized to produceGeSbTe materials on the tie-line. Since the relative amounts of the Ge,Sb, and Te present in the GeSbTe material may be altered, the meltingpoint, glass transition temperature, crystallization speed, or dataretention rate of the GeSbTe may be tailored as desired.

The illustrations presented herein are not meant to be actual views ofany particular intermediate structure or PCRAM device, but are merelyidealized representations which are employed to describe the presentinvention. The figures are not necessarily drawn to scale. Additionally,elements common between figures may retain the same numericaldesignation.

Since the method of the present invention utilizes an ALD process toform the GeSbTe material, the method may be used to deposit the GeSbTematerial in small openings in the substrate, such as in small openingsin which CVD is not suitable. By way of example, the openings in thesubstrate may have a width of less than approximately 100 nm. As shownin FIG. 1, the GeSbTe material 2 may be deposited in the openings 4 inthe substrate 6. The GeSbTe material 2 in the openings 4 may be highlyconformal and have uniformity of chemical composition.

The method of the present invention may be utilized to produce PCRAMdevices that include the GeSbTe material. The GeSbTe material 2 may beused in a PCRAM device 20, as illustrated in FIG. 2. While FIG. 2illustrates one embodiment of a PCRAM device 20, the GeSbTe material 2may be utilized in other PCRAM structures or in a complementarymetal-oxide semiconductor (“CMOS”) device. The PCRAM device 20 includesa memory matrix or array (not shown) that includes a plurality of memorycells for storing data. The memory matrix is coupled to peripherycircuitry (not shown) by a plurality of control lines. The peripherycircuitry may include circuitry for addressing the memory cellscontained within the memory matrix, along with circuitry for storingdata in and retrieving data from the memory cells. The peripherycircuitry may also include other circuitry used for controlling orotherwise ensuring the proper functioning of the PCRAM device 20.

The memory matrix includes a plurality of memory cells that may bearranged in generally perpendicular rows and columns, although otherarrangements are contemplated. The memory cells in each row are coupledtogether by a respective access line, for example a wordline (notshown), and the memory cells in each column are coupled together by arespective data/sense line, for example a digit line 22. Each memorycell includes a wordline node that is coupled to a respective wordline,and each memory cell includes a digit line node that is coupled to arespective digit line 22. The wordlines and digit lines 22 arecollectively referred to as address lines. These address lines areelectrically coupled to the periphery circuitry so that each of thememory cells can be accessed for the storage and retrieval ofinformation. The memory cell includes a memory element, such as aprogrammable resistive element, which is coupled to an access device(not shown), such as a diode. The memory element is formed from theGeSbTe material 2. The diode may be a conventional diode, a zener diode,or an avalanche diode, depending upon whether the diode array of thememory matrix is operated in a forward biased mode or a reverse biasedmode. The memory element is coupled to the wordline, and the accessdevice is coupled to the digit line 22. However, connections of thememory element may be reversed without adversely affecting the operationof the memory matrix.

As shown in FIG. 2, the PCRAM device 20 includes substrate 24, digitline 22, n-doped polysilicon material 26, p-doped polysilicon material28, dielectric material 30, lower electrode 32, GeSbTe material 2, upperelectrode 34, insulative material 36, oxide material 38, and contacthole 40 (filled with conductive material 42). The PCRAM device 20 may beformed by conventional techniques, which are not described in detailherein. The digit lines 22 may be formed in or on the substrate 24. Byway of non-limiting example, the digit line 22 may formed in thesubstrate 24 as a doped N⁺ type trench. Access device (not shown) may beformed on top of the digit line 22. The access device may be a diode, orother device, formed by the n-doped polysilicon material 26 and thep-doped polysilicon material 28. Next, the dielectric material 30 may beformed on top of the p-doped polysilicon material 28. The dielectricmaterial 30 may be formed from a suitable insulative or dielectricmaterial, such as plasma enhanced CVD (“PECVD”) silicon oxide (SiO_(x)),where x is 1 or 2, PECVD silicon nitride (Si₃N₄), or standard thermalCVD Si₃N₄.

The lower electrode 32 may be formed using collimated PVD or anothersuitable directional deposition technique such that the lower electrode32 is formed on top of the p-doped polysilicon material 28. The lowerelectrode 32 may be formed from at least one material, and may be formedin at least one layer or other three-dimensional configuration. Forinstance, a carbon material may be used as a barrier material to preventunwanted migration between the subsequently deposited GeSbTe material 2and the p-doped polysilicon material 28. Titanium nitride (TiN) may thenbe deposited upon the carbon material to complete the formation of thelower electrode 32. Additional materials that may be used to form thelower electrode 32 include, but are not limited to, titanium aluminumnitride (TiAlN) or tungsten (W).

The GeSbTe material 2 may be deposited so that the GeSbTe material 2contacts the lower electrode 32. A thickness at which the GeSbTematerial 2 is deposited may depend on the size of the lower electrode32. By way of non-limiting example, if the lower electrode 32 iscircular and has a diameter of approximately 40 nm, the GeSbTe material2 may be deposited at a thickness of from approximately 400 A toapproximately 2000 A. The GeSbTe material 2 may be a substantiallyhomogeneous material. The upper electrode 34 may be deposited on top ofthe GeSbTe material 2. The upper electrode 34 may be formed from TiN orother suitable material. After the upper electrode 34, the GeSbTematerial 2, the dielectric material 30, and the access device have beenpatterned and etched to form an individual memory cell, the insulativematerial 36, such as silicon nitride, may be deposited over thestructure. The oxide material 38 may then be deposited over theinsulative material 36. The oxide material 38 may be patterned and thecontact hole 40 formed through the oxide material 38 and the insulativematerial 36. The contact hole 40 may then be filled with the conductivematerial 42 to form a wordline and produce the PCRAM device 20 shown inFIG. 2.

While the methods of the present invention has been used herein todescribe the formation of GeSbTe materials, other chalcogenide phasechange materials, such as indium-antimony-tellurium materials, may beformed in a similar manner by selecting appropriate indium precursors,such as a reactive indium precursor (i.e., an indium silyl precursor)and a co-reactive indium precursor (i.e., an indium halide precursor).Additionally, binary chalcogenide materials, such as copper-tellurium orgermanium-sulfur may be formed in a similar manner.

CONCLUSION

In one embodiment, the present invention includes a method of forming aGeSbTe material that comprises conducting an ALD layer cycle of a firstmetal, the ALD layer cycle comprising a reactive first metal precursorand a co-reactive first metal precursor. An ALD layer cycle of a secondmetal is then conducted, the ALD layer cycle comprising a reactivesecond metal precursor and a co-reactive second metal precursor. An ALDlayer cycle of a third metal is then conducted, the ALD layer cyclecomprising a reactive third metal precursor and a co-reactive thirdmetal precursor. The ALD layer cycle of the first metal, the ALD layercycle of the second metal, and the ALD layer cycle of the third metalare then repeated to form a GeSbTe material having a desiredstoichiometry.

In another embodiment, the present invention includes a method offorming a GeSbTe material that comprises forming a plurality ofgermanium layers, antimony layers, and tellurium layers on a substratelocated in an ALD reaction chamber. A germanium layer of the pluralityof germanium layers is formed by introducing a reactive germaniumprecursor and a co-reactive germanium precursor to the ALD reactionchamber. The reactive germanium precursor and the co-reactive germaniumprecursor are combined to form the germanium layer. An antimony layer ofthe plurality of antimony layers is formed by introducing a reactiveantimony precursor and a co-reactive antimony precursor to the ALDreaction chamber. The reactive antimony precursor and the co-reactiveantimony precursor are combined to form the antimony layer. A telluriumlayer of the plurality of tellurium layers is formed by introducing areactive tellurium precursor and a co-reactive tellurium precursor tothe ALD reaction chamber. The reactive tellurium precursor and theco-reactive tellurium precursor are combined to form the telluriumlayer. The formation of the plurality of germanium layers, antimonylayers, and tellurium layers is repeated to form a GeSbTe materialhaving a desired stoichiometry.

In an additional embodiment, the present invention includes a method offorming a semiconductor device structure that comprises forming aplurality of openings in a substrate and forming a GeSbTe material byALD in the plurality of openings. The openings have a width of less thanapproximately 100 nm.

While the invention is susceptible to various modifications andalternative forms, specific embodiments have been shown by way ofexample in the drawings and have been described in detail herein.However, the invention is not intended to be limited to the particularforms disclosed. Rather, the invention is to cover all modifications,equivalents, and alternatives falling within the scope of the inventionas defined by the following appended claims and their legal equivalents.

1. A method of foil ring a material, comprising: conducting an atomiclayer deposition (ALD) layer cycle of a first metal, the ALD layer cyclecomprising a reactive first metal precursor and a co-reactive firstmetal precursor; conducting an ALD layer cycle of a second metal, theALD layer cycle comprising a reactive second metal precursor and aco-reactive second metal precursor; conducting an ALD layer cycle of athird metal, the ALD layer cycle comprising a reactive third metalprecursor and a co-reactive third metal precursor; and repeating the ALDlayer cycle of the first metal, the ALD layer cycle of the second metal,and the ALD layer cycle of the third metal to form a material having adesired stoichiometry.
 2. The method of claim 1, wherein conducting anatomic layer deposition (ALD) layer cycle of a first metal comprisesconducting the ALD layer cycle of germanium.
 3. The method of claim 1,wherein conducting an ALD layer cycle of a second metal comprisesconducting the ALD layer cycle of antimony.
 4. The method of claim 1,wherein conducting an ALD layer cycle of a third metal comprisesconducting the ALD layer cycle of tellurium.
 5. The method of claim 1,wherein repeating the ALD layer cycle of the first metal, the ALD layercycle of the second metal, and the ALD layer cycle of the third metalcomprises forming a germanium-antimony-tellurium material having acomposition that is tunable for the germanium-antimony-telluriummaterial.
 6. A method of forming a germanium-antimony-telluriummaterial, comprising: forming a plurality of germanium layers, antimonylayers, and tellurium monolayers on a substrate located in an atomiclayer deposition (ALD) reaction chamber, wherein: forming a germaniumlayer of the plurality of germanium layers comprises: introducing areactive germanium precursor and a co-reactive germanium precursor tothe ALD reaction chamber; and combining the reactive germanium precursorand the co-reactive germanium precursor to form the germanium layer;forming an antimony layer of the plurality of antimony layers comprises:introducing a reactive antimony precursor and a co-reactive antimonyprecursor to the ALD reaction chamber; and combining the reactiveantimony precursor and the co-reactive antimony precursor to form theantimony layer; and forming a tellurium layer of the plurality oftellurium layers comprises: introducing a reactive tellurium precursorand a co-reactive tellurium precursor to the ALD reaction chamber; andcombining the reactive tellurium precursor and the co-reactive telluriumprecursor to form the tellurium layer; and repeating the formation ofthe plurality of germanium layers, antimony layers, and tellurium layersto form a germanium-antimony-tellurium material having a desiredstoichiometry.
 7. The method of claim 6, wherein introducing a reactivegermanium precursor and a co-reactive germanium precursor to the ALDreaction chamber comprises introducing the reactive germanium precursorcomprising a germanium halide compound or a germanium alkoxide compoundto the ALD reaction chamber.
 8. The method of claim 6, whereinintroducing a reactive germanium precursor and a co-reactive germaniumprecursor to the ALD reaction chamber comprises introducing the reactivegermanium precursor selected from the group consisting of Ge(II)F₂,Ge(IV)F₄, Ge(II)Cl₂, Ge(IV)Cl₄, Ge(II)Br₂, Ge(IV)Br₄, Ge(II)I₂,Ge(IV)I₄, Ge(IV)(OMe)₄, and Ge(IV)(OEt)₄ to the ALD reaction chamber. 9.The method of claim 6, wherein introducing a reactive germaniumprecursor and a co-reactive germanium precursor to the ALD reactionchamber comprises introducing the co-reactive germanium precursorcomprising a germanium silyl compound to the ALD reaction chamber. 10.The method of claim 6, wherein introducing a reactive germaniumprecursor and a co-reactive germanium precursor to the ALD reactionchamber comprises introducing the co-reactive germanium precursorselected from the group consisting of Ge(II)(trimethylsilyl)₂,Ge(IV)(trimethylsilyl)₄, and GeH(trimethylsilyl)₃, to the ALD reactionchamber.
 11. The method of claim 6, wherein combining the reactivegermanium precursor and the co-reactive germanium precursor to form thegelulanium layer comprises combining the reactive germanium precursorand the co-reactive germanium precursor in the absence of a co-reactant.12. The method of claim 6, wherein introducing a reactive antimonyprecursor and a co-reactive antimony precursor to the ALD reactionchamber comprises introducing the reactive antimony precursor comprisingan antimony halide compound or an antimony alkoxide compound to the ALDreaction chamber.
 13. The method of claim 6, wherein introducing areactive antimony precursor and a co-reactive antimony precursor to theALD reaction chamber comprises introducing the reactive antimonyprecursor selected from the group consisting of Sb(V)F₅, Sb(III)F₃,Sb(III)Cl₃, Sb(V)Cl₅, Sb(III)I₃, Sb(III)Br₃, Sb(III)(OMe)₃, andSb(III)(OEt)₃ to the ALD reaction chamber.
 14. The method of claim 6,wherein introducing a reactive antimony precursor and a co-reactiveantimony precursor to the ALD reaction chamber comprises introducing theco-reactive antimony precursor comprising an antimony silyl compound tothe ALD reaction chamber.
 15. The method of claim 6, wherein introducinga reactive antimony precursor and a co-reactive antimony precursor tothe ALD reaction chamber comprises introducing the co-reactive antimonyprecursor comprising Sb(III)(trimethylsilyl)₃ to the ALD reactionchamber.
 16. The method of claim 6, wherein combining the reactiveantimony precursor and the co-reactive antimony precursor to form theantimony layer comprises combining the reactive antimony precursor andthe co-reactive antimony precursor in the absence of a co-reactant. 17.The method of claim 6, wherein introducing a reactive telluriumprecursor and a co-reactive tellurium precursor to the ALD reactionchamber comprises introducing the reactive tellurium precursorcomprising a tellurium halide compound or a tellurium alkoxide compoundto the ALD reaction chamber.
 18. The method of claim 6, whereinintroducing a reactive tellurium precursor and a co-reactive telluriumprecursor to the ALD reaction chamber comprises introducing the reactivetellurium precursor selected from the group consisting of TeCl₄, TeBr₄,TeI₄, Te(IV)(OMe)₄, and Te(IV)(OEt)₄ to the ALD reaction chamber. 19.The method of claim 6, wherein introducing a reactive telluriumprecursor and a co-reactive tellurium precursor to the ALD reactionchamber comprises introducing the co-reactive tellurium precursorcomprising a tellurium silyl compound to the ALD reaction chamber. 20.The method of claim 6, wherein introducing a reactive telluriumprecursor and a co-reactive tellurium precursor to the ALD reactionchamber comprises introducing the co-reactive tellurium precursorselected from the group consisting of Te(II)(trimethylsilyl)₂ orTe(IV)(trimethylsilyl)₄ to the ALD reaction chamber.
 21. The method ofclaim 6, wherein combining the reactive tellurium precursor and theco-reactive tellurium precursor to form the tellurium layer comprisescombining the reactive tellurium precursor and the co-reactive telluriumprecursor in the absence of a co-reactant.
 22. A method of forming asemiconductor device structure, comprising forming a plurality ofopenings in a substrate, the plurality of openings having a width ofless than approximately 100 nm; and forming agermanium-antimony-tellurium material by atomic layer deposition (ALD)in the plurality of openings.
 23. The method of claim 22, whereinforming a germanium-antimony-tellurium material by atomic layerdeposition (ALD) in the plurality of openings comprises: conducting anALD layer cycle of a first metal, the ALD layer cycle comprising areactive first metal precursor and a co-reactive first metal precursor;conducting an ALD layer cycle of a second metal, the ALD layer cyclecomprising a reactive second metal precursor and a co-reactive secondmetal precursor; conducting an ALD layer cycle of a third metal, the ALDlayer cycle comprising a reactive third metal precursor and aco-reactive third metal precursor; and repeating the ALD layer cycle ofthe first metal, the ALD layer cycle of the second metal, and the ALDlayer cycle of the third metal to form a germanium-antimony-telluriummaterial having a desired stoichiometry.
 24. The method of claim 22,wherein forming a germanium-antimony-tellurium material by atomic layerdeposition (ALD) in the plurality of openings comprises conformallydepositing the germanium-antimony-tellurium material in the plurality ofopenings.
 25. A method of forming a material, comprising: conducting anatomic layer deposition (ALD) cycle of a first metal and a second metal,the ALD cycle comprising a reactive first metal precursor, a co-reactivefirst metal precursor, a reactive second metal precursor, and aco-reactive second metal precursor; conducting an ALD cycle of thesecond metal and a third metal, the ALD cycle comprising the reactivesecond metal precursor, the co-reactive second metal precursor, areactive third metal precursor, and a co-reactive third metal precursor;and repeating the ALD cycle of the first metal and the second metal andthe ALD cycle of the second metal and the third metal to form a materialhaving a desired stoichiometry.